Datasheet Details
| Part number | 2SC1723 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 180.66 KB |
| Description | NPN Transistor |
| Datasheet | 2SC1723-INCHANGE.pdf |
|
|
Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1723.
| Part number | 2SC1723 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 180.66 KB |
| Description | NPN Transistor |
| Datasheet | 2SC1723-INCHANGE.pdf |
|
|
|
·Silicon NPN triple diffused LTP ·High breakdown voltage ·Large collector dissipation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Low frequency high voltage power amplifier ·TV power supply drivers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.2 A 15 W 150 ℃ Tstg Storage Temperature Range -45~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1723 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA ;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 100mA;
IB= 10mA VBE(ON) Base-Emitter ON Voltage IC= 50mA ;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC1723 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SC1722 | NPN Transistor |
| 2SC1730 | Silicon NPN RF Transistor |
| 2SC1755 | NPN Transistor |
| 2SC1756 | NPN Transistor |
| 2SC1777 | NPN Transistor |
| 2SC1783 | NPN Transistor |
| 2SC1785 | NPN Transistor |
| 2SC1004 | NPN Transistor |
| 2SC1008 | NPN Transistor |
| 2SC1024 | NPN Transistor |