Datasheet4U Logo Datasheet4U.com

2SC1953 - NPN Transistor

General Description

High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) Good Linearity of hFE Complement to Type 2SA914 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low-frequency power pre-amplification,which is optimu

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SC1953 Power Transistors Panasonic Semiconductor
2SC1953 SILICON POWER TRANSISTOR SavantIC
2SC1955 SILICON NPN TRANSISTOR Toshiba
2SC1957 SILICON NPN TRANSISTOR BLUE ROCKET ELECTRONICS
2SC1959 PNP Transistor Toshiba Semiconductor

Other Datasheets by Inchange Semiconductor

Part Number Description
2SC1904 NPN Transistor
2SC1905 NPN Transistor
2SC1906 NPN Transistor
2SC1907 NPN Transistor
2SC1913 NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) ·Good Linearity of hFE ·Complement to Type 2SA914 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low-frequency power pre-amplification,which is optimum for the pre-driver stage of a 60 W to 100 W output amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 50 mA ICP Collector Current-Peak PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 100 mA 1.