2SC1953
2SC1953 is NPN Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 150V(Min)
- Good Linearity of h FE
- plement to Type 2SA914
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for low-frequency power pre-amplification,which is optimum for the pre-driver stage of a 60 W to 100 W output amplifier.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Collector Current-Continuous
50 m A
Collector Current-Peak
Collector Power Dissipation @ Ta=25℃
Junction Temperature
100 m A
℃
Tstg
Storage Temperature Range
-55~150 ℃
2SC1953 isc website：.iscsemi.cn...
