2SC1953 datasheet by Inchange Semiconductor.
| Part number | 2SC1953 |
|---|---|
| Datasheet | 2SC1953-INCHANGE.pdf |
| File Size | 212.52 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
|
|
·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) ·Good Linearity of hFE ·plement to Type 2SA914 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low-frequency power pre-amplification,which is optimum for the pre-driver stage of a 60 W to 100 W output amplifier. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 0.1mA.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SC1953 | Power Transistors | Panasonic Semiconductor |
 |
2SC1953 | SILICON POWER TRANSISTOR | SavantIC |
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