2SC1953 Description
Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=0.1mA;IB=0 IE=10µA ;IC=0 IC=30mA ;IB=3mA VCB=100V; VCB=10V;f=1MHz IE=-10mA ; VCB=10V 70 90 MIN 150 5 2SC1953...