Datasheet Details
| Part number | 2SC2098 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 181.22 KB |
| Description | NPN Transistor |
| Datasheet | 2SC2098-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC2098.
| Part number | 2SC2098 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 181.22 KB |
| Description | NPN Transistor |
| Datasheet | 2SC2098-INCHANGE.pdf |
|
|
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·Silicon NPN epitaxial planar ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·The 2SC2098 is designed for 25=50MHz AF power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 70 V VEBO Emitter-Base Voltage 4 V IC Collector Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 6 A 25 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC2098 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA;
IB= 0 ICBO Collector Cutoff Current VCB= 70V;
IE= 0 IEBO Emitter Cutoff Current VEB= 6V;
Compare 2SC2098 distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SC2098 | SILICON NPN TRANSISTOR | Toshiba |
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2SC2098 | PNP / NPN Epitaxial Planar Silicon Transistors | Sanyo Semicon Device |
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