Datasheet Summary
SILICON NPN EPITAXIAL PLANAR TYPE
CITIZEN BAND AND HAM BAND UP TO 50MHz RF POWER AMPLIFIER APPLICATIONS. (LOW SUPPLY VOLTAGE USE)
Features
. Remended for 12W(PEP) SSB Citizen Band
Transceiver Applications.
. High Power Gain : Gpe=11.8dB(Typ. ) @ f=28MHz . Designed to Withstand Load Mismatch at All Phase
Angles with Infinite VSWR at 17 Volts.
Unit in mm
10.3 MAX, ffa6:r0.2
MAXIMUM RATINGS (Ta=25 °C)
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage
(R EB =10n) Emitter-Base Voltage
Collector Current
Emitter Current Collector Power Dissipation
(Tc=25°C) Junction Temperature Storage Temperature Range
SYMBOL VCBO VCER
Vebo ic IE PC
Tj T stg
RATING
70 70
4 6...
