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2SC2098 - PNP / NPN Epitaxial Planar Silicon Transistors

Download the 2SC2098 datasheet PDF. This datasheet also covers the 2SC5887 variant, as both devices belong to the same pnp / npn epitaxial planar silicon transistors family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • 18.1 16.0 Adoption of MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. 3.5 7.2 5.6 14.0 1.6 1.2 0.75 2.4 0.7 2.55 1 2 3 2.55 2.4 Specifications ( ) : 2SA2098 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Stora.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2SC5887_SanyoSemiconDevice.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Ordering number : ENN7495 2SA2098 / 2SC5887 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2098 / 2SC5887 High-Current Switching Applications Applications • Package Dimensions unit : mm 2041A [2SA2098 / 2SC5887] 10.0 3.2 4.5 2.8 Relay drivers, lamp drivers, motor drivers. Features • • • • 18.1 16.0 Adoption of MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. 3.5 7.2 5.6 14.0 1.6 1.2 0.75 2.4 0.7 2.55 1 2 3 2.55 2.