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2SC2099 - PNP / NPN Epitaxial Planar Silicon Transistors

Download the 2SC2099 datasheet PDF. This datasheet also covers the 2SC5888 variant, as both devices belong to the same pnp / npn epitaxial planar silicon transistors family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • 18.1 16.0 Adoption of MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. 3.5 7.2 5.6 14.0 1.6 1.2 0.75 1 2 3 2.55 2.4 0.7 2.55 Specifications ( ) : 2SA2099 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Te.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2SC5888_SanyoSemiconDevice.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
2SC2099 TRANSISTOR Toshiba Semiconductor
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2SC2091 Silicon NPN Transistor ETC
2SC2094 NPN Transistor Mitsubishi Electric Semiconductor
2SC2097 NPN Transistor Mitsubishi Electric Semiconductor

Other Datasheets by SANYO (now Panasonic)

Part Number Description
2SC2098 PNP / NPN Epitaxial Planar Silicon Transistors
2SC2078 NPN Epitaxial Planar Silicon Transistor
2SC2210 NPN Transistor
2SC2271 NPN Transistor
2SC2314 NPN Epitaxial Planar Silicon Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Ordering number : ENN7331 2SA2099 / 2SC5888 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2099 / 2SC5888 High-Current Switching Applications Applications • Package Dimensions unit : mm 2041A [2SA2099 / 2SC5888] 10.0 3.2 4.5 2.8 Relay drivers, lamp drivers, motor drivers. Features • • • • 18.1 16.0 Adoption of MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. 3.5 7.2 5.6 14.0 1.6 1.2 0.75 1 2 3 2.55 2.4 0.7 2.