Datasheet Details
| Part number | 2SC2120 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 190.74 KB |
| Description | Silicon NPN Transistor |
| Datasheet | 2SC2120-INCHANGE.pdf |
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Overview: isc Silicon NPN Transistor.
| Part number | 2SC2120 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 190.74 KB |
| Description | Silicon NPN Transistor |
| Datasheet | 2SC2120-INCHANGE.pdf |
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·High hFE(1)=100-320 ·1 Watts Amplifier Applications ·Complement to Type 2SA950 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio power amplifier Applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Curren IB Base Curren PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 2SC2120 VALUE UNIT 35 V 30 V 5 V 800 mA 160 mA 600 mW 150 ℃ -55~150 ℃ isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Transistor 2SC2120 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 500mA ;
IB= 20mA VBE(on) Base-Emitter On Voltage IC= 10mA ;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SC2120 | TRANSISTOR | Toshiba Semiconductor |
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2SC2120 | NPN Transistor | JIANGSU CHANGJIANG |
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2SC2120 | NPN Plastic Encapsulated Transistor | SeCoS |
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2SC2120 | NPN Transistor | Dc Components |
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2SC2120 | NPN Transistor | SEMTECH |
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| 2SC2151 | NPN Transistor |
| 2SC2166 | NPN Transistor |
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