Inchange Semiconductor 2SC2120
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SC2120 |
|---|---|
| Datasheet | 2SC2120 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●High hFE(1)=100-320●1 Watts Amplifier
APPLICATIONS
●Complement to Type 2SA950●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Audio power amplifierAPPLICATIONS
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Curren IB Base Curren PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 2SC2120 VALUE UNIT 35 V 30 V 5 V 800 mA 160 mA 600 mW 150 ℃ -55~150 ℃ isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Transistor 2SC2120ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 500mA ; IB= 20mA VBE(on) Base-Emitter On Voltage IC= 10mA ; VCE= 1V ICBO Emitter Cutoff Current VCB= 35V; IE= 0 IEBO Collector Cutoff Current VEB= 5V; IC...