2SC2120 - Silicon NPN Transistor

Inchange Semiconductor

General Description

High hFE(1)=100-320 1 Watts Amplifier Applications Complement to Type 2SA950 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio power amplifier Applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collecto

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Datasheet Details

Part number	2SC2120
Manufacturer	Inchange Semiconductor
File Size	190.74 KB
Description	Silicon NPN Transistor
Datasheet	2SC2120 Datasheet

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isc Silicon NPN Transistor DESCRIPTION ·High hFE(1)=100-320 ·1 Watts Amplifier Applications ·Complement to Type 2SA950 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio power amplifier Applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Curren IB Base Curren PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 2SC2120 VALUE UNIT 35 V 30 V 5 V 800 mA 160 mA 600 mW 150 ℃ -55~150 ℃ isc website：www.iscsemi.