Datasheet Summary
1112SC2120
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
Audio Power Amplifier Applications
Unit: mm
- High hFE: hFE (1) = 100~320
- 1 watts amplifier applications.
- plementary to 2SA950
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range
Symbol
VCBO VCEO VEBO
IC IB PC Tj Tstg
Rating
35 30 5 800 160 600 150
- 55~150
Unit
V V V mA mA mW °C °C
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current Emitter cut-off current Collector-emitter...
