Datasheet Details
| Part number | 2SC2229 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 171.72 KB |
| Description | NPN Transistor |
| Datasheet | 2SC2229-INCHANGE.pdf |
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Overview: isc Silicon NPN Pow Transistor INCHANGE Semiconductor 2SC2229.
| Part number | 2SC2229 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 171.72 KB |
| Description | NPN Transistor |
| Datasheet | 2SC2229-INCHANGE.pdf |
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·High breakdown voltage ·Low output capacitance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High voltage switching applications ·Driver stage audio amplifier applications ·Black and white TV video output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 1500 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 50 mA IE Emitter Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -50 mA 0.8 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Pow Transistor INCHANGE Semiconductor 2SC2229 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 10mA ;
IB= 1mA VBE(sat) Base-Emitter Saturation Voltage IC= 10mA ;
IB= 1mA ICBO Collector Cutoff Current VCB= 200V;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC2229 | NPN Transistor | Toshiba Semiconductor |
 |
2SC2229 | NPN Transistor | SeCoS |
| Part Number | Description |
|---|---|
| 2SC2209 | NPN Transistor |
| 2SC2238 | NPN Transistor |
| 2SC2238A | NPN Transistor |
| 2SC2238B | NPN Transistor |
| 2SC2238B | NPN Transistor |
| 2SC2239 | NPN Transistor |
| 2SC2243 | NPN Transistor |
| 2SC2244 | NPN Transistor |
| 2SC2245 | NPN Transistor |
| 2SC2246 | NPN Transistor |