SeCoS Halbleitertechnologie GmbH 2SC2229
NPN Transistor
FEATURES
High Breakdown Voltage High Transition Frequency TO-92MOD AD B K EF C Collector 2 3 Base 1 Emitter N GH 1 Emitter 2 Collector M 3 Base LJ REF. A B C D E F G Millimeter Min. Max. 5.50 6.50 8.00 9.00 12.70 14.50 4.50 5.30 0.35 0.65 0.30 0.51 1.50 TYP. REF. H J K L M N Millimeter Min. Max. 1.70 2.05 2.70 3.20 0.85 1.15 1.60 Max 0.00 0.40 4.00 MinABSOLUTE MAXIMUM RATINGS
(TA=25°C unless otherwise specified) Parameter Symbol Rating Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Thermal Resistance, Junction To Ambient Junction, Storage Temperature VCBO VCEO VEBO IC PC RθJA TJ, TSTG 200 150 5 50 800 156 150, -55~150 Unit V V V mA mW °C/W °CELECTRICAL CHARACTERISTICS
(TA=25°C unless otherwise specified) Parameter