Inchange Semiconductor 2SC2233
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SC2233 |
|---|---|
| Datasheet | 2SC2233 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Collector-Emitter Breakdown Voltage- :VCEO= 60V(Min)●DC Current Gain- : hFE= 30(Min)@ (VCE= 5V, IC= 1A)
●High Collector Current
●High Collector Power Dissipation
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●TV Horizontal Deflection Output ApplicationABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak 10 A IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1 A 1.5 W 40 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC2233 isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB=0.4A VBE(sat) Base-Emitte...