Inchange Semiconductor 2SC2270
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SC2270 |
|---|---|
| Datasheet | 2SC2270 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●High Collector Power Dissipation PC=10W(Tc=25℃), PC=1.0W(Ta=25℃)●High DC Current Gain : hFE=140~450@VCE=2V,IC=0.5A hFE=70(Min)@VCE=2V,IC=4A
●Low Collector Saturation Voltage VCE(sat)=1.0V(Max)@IC=4A,IB=0.1A
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for strobo flash and medimum power amplifier applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 50 VCEO Collector-Emitter Voltage 20 VCES Collector-Emitter Voltage 40 VEBO Emitter-Base Voltage 8 IC Collector Current-Continuous 5 ICM Collector Current-Peak 8 IE Emitter Current-Continuous -5 IEM Emitter Current-Peak -8 Collector Power Dissipation @ TC=25℃ 10 PC Collector Power Dissipation @ Ta=25℃ 1.0 UNIT V V V V A A A A W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC2270 isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC2270ELECTRICAL CHARACTERISTICS
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