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2SC2270 - NPN Transistor

General Description

High Collector Power Dissipation PC=10W(Tc=25℃), PC=1.0W(Ta=25℃) High DC Current Gain : hFE=140~450@VCE=2V,IC=0.5A hFE=70(Min)@VCE=2V,IC=4A Low Collector Saturation Voltage VCE(sat)=1.0V(Max)@IC=4A,IB=0.1A Minimum Lot-to-Lot variations for robust device performance and reliable o

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isc Silicon NPN Power Transistor DESCRIPTION ·High Collector Power Dissipation PC=10W(Tc=25℃), PC=1.0W(Ta=25℃) ·High DC Current Gain : hFE=140~450@VCE=2V,IC=0.5A hFE=70(Min)@VCE=2V,IC=4A ·Low Collector Saturation Voltage VCE(sat)=1.0V(Max)@IC=4A,IB=0.1A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for strobo flash and medimum power amplifier applications.