Inchange Semiconductor 2SC2275
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SC2275 |
|---|---|
| Datasheet | 2SC2275 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Collector-Emitter Breakdown Voltage : V(BR)CEO= 120V(Min)●Good Linearity of hFE
●Complement to Type 2SA985
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Audio frequency power amplifier applications●High frequency power amplifier applications
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1.5 A ICM Collector Current-Peak 3.0 A IB Base Current-Continuous Total Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 0.3 A 1.5 W 25 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC2275 isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.1A VBE(sat) Base-Emitter Saturati...