Inchange Semiconductor 2SC2351
Silicon NPN RF Transistor
| Part No. | 2SC2351 |
|---|---|
| Datasheet | 2SC2351 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN RF Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Low Noise NF = 1.5 dB TYP. ; @ f = 1 GHz●High Maximum Available Gain MAG = 14 dB TYP. ; @ f = 1 GHz
APPLICATIONS
●Designed for use as UHF oscillators and a UHF mixer in a tuner of a TV receiver.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 25 V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 12 V 3 V 70 mA 0.25 W 150 ℃ -65~150 ℃ isc website： 1 INCHANGE Semiconductor isc Silicon NPN RF Transistor isc RF Product Specification 2SC2351ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER ICBO Collector Cutoff Current IEBO Emitter Cutoff Current hFE DC Current Gain fT Current-Gain—Bandwidth Product COB Output Capacitance ︱S21e︱2 Insertion Power Gain NF Noise Figure MAG Maximum Available Gain CONDITIONS MIN TYP. MAX UNIT VCB= 15V; IE= 0 0.1 μA VEB= 2.0V; IC= 0 0.1 μA IC= 20mA ; VCE= 10V 40 200 IC= 20mA;VCE= 10V 4.5 GHz IE= 0 ; VCB= 10V; f= 1MHz 0.75 1.0 pF IC= 20mA ; VCE= 10V;f= 1.0GHz 9 11 dB IC= 5mA ; VCE= 10V;f= 1.0GHz 1.
