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DATA SHEET
SILICON TRANSISTOR
2SC2351
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD
FEATURES
• NF • MAG 1.5 dB 14 dB TYP. TYP. @ f = 1.0 GHz @ f = 1.0 GHz
PACKAGE DIMENSIONS (Units: mm)
2.8±0.2
0.4 −0.05
+0.1
1.5
0.65 −0.15
+0.1
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
0.95 0.95
Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature
VCEO VEBO IC PT Tj Tstg
12 3.0 70 250 150 −65 to +150
V V mA mW °C
2.9±0.2
Collector to Base Voltage
VCBO
25
V
2
0.3
°C
1.1 to 1.4
Marking
0.16 −0.06
+0.1
PIN CONNECTIONS 1. Emitter 2. Base 3.