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2SC2351 - NPN Transistor

Key Features

  • NF.
  • MAG 1.5 dB 14 dB TYP. TYP. @ f = 1.0 GHz @ f = 1.0 GHz.

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📁 Similar Datasheet

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DATA SHEET SILICON TRANSISTOR 2SC2351 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES • NF • MAG 1.5 dB 14 dB TYP. TYP. @ f = 1.0 GHz @ f = 1.0 GHz PACKAGE DIMENSIONS (Units: mm) 2.8±0.2 0.4 −0.05 +0.1 1.5 0.65 −0.15 +0.1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) 0.95 0.95 Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature VCEO VEBO IC PT Tj Tstg 12 3.0 70 250 150 −65 to +150 V V mA mW °C 2.9±0.2 Collector to Base Voltage VCBO 25 V 2 0.3 °C 1.1 to 1.4 Marking 0.16 −0.06 +0.1 PIN CONNECTIONS 1. Emitter 2. Base 3.