Inchange Semiconductor 2SC2460
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SC2460 |
|---|---|
| Datasheet | 2SC2460 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●High Current Capability●Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min.)
●Complement to Type 2SA1050
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for power amplifer and general purpose applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 140 V VCEO Collector-Emitter Voltage 140 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 12 A 100 W 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SC2460 isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power TransistorELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC=...