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isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC2461
DESCRIPTION ·With TO-3 Package ·Complementary to 2SA1051 ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation.
APPLICATIONS ·Recommended for 10W high-fidelity audio frequency amplifier
output stage
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
150
V
VCEO
Collector-Emitter Voltage
150
V
VEBO IC PC TJ Tstg
Emitter-Base Voltage
Collector Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature
Storage Temperature Range
5
V
15
A
150
W
150
℃
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case 0.833 ℃/W
isc website:www.iscsemi.