Inchange Semiconductor 2SC2489
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SC2489 |
|---|---|
| Datasheet | 2SC2489 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
Good Linearity of hFE●Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 150V (Min)
●Wide Area of Safe Operation
●Complement to Type 2SA1065
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for AF amplifier,high power amplifier applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 15 A 120 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ 2SC2489● isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ; IE= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB= 0.8A VBE(on) Base-Emitter On Voltag...