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2SC2489 - Silicon NPN Power Transistor

General Description

Good Linearity of hFE Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 150V (Min) Wide Area of Safe Operation Complement to Type 2SA1065 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for AF amplifier,high power amp

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isc Silicon NPN Power Transistor DESCRIPTION Good Linearity of hFE ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 150V (Min) ·Wide Area of Safe Operation ·Complement to Type 2SA1065 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for AF amplifier,high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 15 A 120 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ 2SC2489 · isc website：www.iscsemi.