Datasheet4U Logo Datasheet4U.com

2SC2501 Datasheet NPN Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon NPN Power Transistors.

General Description

·With TO-220 packaging ·Reliable performance at higher powers ·Accurate reproduction of Input signal ·Greater dynamic range ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ·High frequency inverters ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 500 VCEO Collector-Emitter Voltage 400 VEBO Emitter-Base Voltage 7 IC Collector Current-Continuous 3 PT Total Power Dissipation 40 TJ Junction Temperature 150 Tstg Storage Temperature Range -55~150 UNIT V V V A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 3.12 ℃/W 2SC2501 isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA;

IB= 0 VCBO Collector-Base Voltage IC= 1mA;

IE= 0 VEBO Emitter-Base Voltage IE= 1mA;

2SC2501 Distributor