Inchange Semiconductor 2SC2501
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SC2501 |
|---|---|
| Datasheet | 2SC2501 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●With TO-220 packaging●Reliable performance at higher powers
●Accurate reproduction of Input signal
●Greater dynamic range
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Switching regulators●High frequency inverters
●General purpose power amplifiers
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 500 VCEO Collector-Emitter Voltage 400 VEBO Emitter-Base Voltage 7 IC Collector Current-Continuous 3 PT Total Power Dissipation 40 TJ Junction Temperature 150 Tstg Storage Temperature Range -55~150 UNIT V V V A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 3.12 ℃/W 2SC2501 isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power TransistorsELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA; IB= 0 VCBO Collector-Base Voltage IC= 1m...