Inchange Semiconductor 2SC2502
NPN Transistor
DESCRIPTION
●Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min)●Fast Switching Speed
●Collector-Emitter Saturation Voltage- : VCE(sat)= 0.7V(Max.)@ IC= 3A
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for use in high-voltage, high-speed , power switching in inductive circuit , they are particularly suited for 115 and 220V switchmode applications such as switching regulator’s, inverters.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 500 VCEO Collector-Emitter Voltage 400 VEBO Emitter-Base Voltage 7 IC Collector Current-Continuous 6 ICM Collector Current-Peak 12 IB Base Current-Continuous 2 PC Collector Power Dissipation @ TC=25℃ 50 TJ Junction Temperature 150 Tstg Storage Temperature Range -55~150 UNIT V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 2.5 ℃/W isc website: 1 isc & iscsemi is registered trademark isc Si...