2SC2562 - NPN Transistor

Inchange Semiconductor

General Description

Low Collector Saturation Voltage :VCE(sat)= 0.4(V)(Max)@IC= 3A High Switching Speed Complement to Type 2SA1012 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for high current switching applications.

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2SC2562 npn transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	2SC2562
Manufacturer	Inchange Semiconductor
File Size	217.66 KB
Description	NPN Transistor
Datasheet	2SC2562 Datasheet

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isc Silicon NPN Power Transistor 2SC2562 DESCRIPTION ·Low Collector Saturation Voltage :VCE(sat)= 0.4(V)(Max)@IC= 3A ·High Switching Speed ·Complement to Type 2SA1012 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high current switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A IB Base Current- Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 1 A 25 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.