2SC2562 Overview
Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Base-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=10mA , IB=0 IC=3A; VCB=10V 70 30 MIN 50 2SC2562 SYMBOL V(BR)CEO VCEsat...

