Datasheet Details
| Part number | 2SC2563 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 197.42 KB |
| Description | NPN Transistor |
| Datasheet | 2SC2563-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC2563.
| Part number | 2SC2563 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 197.42 KB |
| Description | NPN Transistor |
| Datasheet | 2SC2563-INCHANGE.pdf |
|
|
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·High power dissipation ·Low Saturation Voltage ·High VCBO ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio frequency output amplifier and general purpose application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCER Collector-Emitter Voltage RBE=150Ω 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak PC Collector Power Dissipation @ Tc=25℃ TJ Junction Temperature 2 A 80 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC2563 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC=4A;
IB= 0.4A ICBO Collector Cutoff Current VCB= 120V ;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC2563 | Silicon NPN Transistor | Toshiba |
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2SC2563 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SC2562 | NPN Transistor |
| 2SC2564 | NPN Transistor |
| 2SC2565 | NPN Transistor |
| 2SC2501 | NPN Transistor |
| 2SC2502 | NPN Transistor |
| 2SC2516 | NPN Transistor |
| 2SC2517 | NPN Transistor |
| 2SC2523 | NPN Transistor |
| 2SC2525 | NPN Transistor |
| 2SC2527 | NPN Transistor |