. Complementary to 2SA1093. . Recommended for 50W audio amplifier output stage. . High transition frequency : fT=90MHz (Typ. Unit in mm 159MAX ^3.2±0.2.
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
1)
)
SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
1
2SC2563
AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS.
features: . Complementary to 2SA1093. . Recommended for 50W audio amplifier output stage. . High transition frequency : fT=90MHz (Typ.
Unit in mm 159MAX ^3.2±0.2
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Collector Current
ic
Base Current
IB
Collector Power Dissipation (Tc=25°C)
Junction Temperature
?C
Storage Temperature Range
stg
RATING 120 120
UNIT
0.8
80 150 -55-150
°C
545-0.2
c3ci
+I
5.45±0.2
1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER
JEDEC
TOSHIBA Weight : 4.
2SC2563 Datasheet
