Datasheet4U Logo Datasheet4U.com

2SC2564 - NPN Transistor

General Description

High Collector-Emitter Breakdown Voltage- V(BR)CEO= 140V(Min) Good Linearity of hFE Complement to Type 2SA1094 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for audio and general purpose applications.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SC2564 Silicon NPN Transistor Toshiba
2SC2564 SILICON POWER TRANSISTOR SavantIC
2SC2561 Silicon NPN Epitaxial Planar Transistor Panasonic Semiconductor
2SC2562 Silicon NPN Transistor Toshiba
2SC2562 SILICON POWER TRANSISTOR SavantIC

Other Datasheets by Inchange Semiconductor

Part Number Description
2SC2562 NPN Transistor
2SC2563 NPN Transistor
2SC2565 NPN Transistor
2SC2501 NPN Transistor
2SC2502 NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= 140V(Min) ·Good Linearity of hFE ·Complement to Type 2SA1094 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 140 V VCEO Collector-Emitter Voltage 140 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 12 A IE Emitter Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -12 A 120 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC2564 isc website：www.iscsemi.