2SC2564 - Silicon NPN Transistor

Toshiba

Key Features

High Breakdown Voltage : VCEO=140V.
High Transition Frequency : fT=90MHz (Typ. ).
Complementary to 2SA1094.
Recommended for 80W High-Fidelity Audio Frequency Amplifier Output Stage. 34.3MAX. Unit in mm.

2SC2564 silicon npn transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	2SC2564
Manufacturer	Toshiba
File Size	90.89 KB
Description	Silicon NPN Transistor
Datasheet	2SC2564 Datasheet

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Full PDF Text Transcription (Reference)

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SILICON NPN EPITAXIAL TYPE (PCT PROCESS) POWER AMPLIFIER APPLICATIONS. FEATURES • High Breakdown Voltage : VCEO=140V • High Transition Frequency : fT=90MHz (Typ.) • Complementary to 2SA1094. • Recommended for 80W High-Fidelity Audio Frequency Amplifier Output Stage. 34.3MAX. Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range SYMBOL V,CBO VCEO v EBO PC stg RATING 140 140 12 -12 120 150 -55vL50 UNIT °C *fe^W^S 1. BASE 2. COLLECTOR(HEAT SINK) 3. EMITTER Weight : 10.