Datasheet Summary
isc Silicon NPN Power Transistor
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 20V(Min)
- Good Linearity of hFE
- Low Collector Saturation Voltage
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- AF power amplifier
- For electronic flash unit
-...
