Datasheet Summary
Power Transistors
Silicon NPN epitaxial planar type
For low-frequency power amplification/ stroboscope/converter
120°
7.5+- 00..15
Unit: mm
2.9±0.2
2.3±0.2 3.8±0.3 11.0±0.5
- Features
3.05±0.1
- Low collector-emitter saturation voltage VCE(sat)
- Satisfactory operation performances and high efficiency with a lowvoltage power supply
-...
