Inchange Semiconductor 2SC2688
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SC2688 |
|---|---|
| Datasheet | 2SC2688 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min)●Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max)@ IC= 50mA, IB= 5mA
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for use in Color TV chroma output circuits.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base voltage 5 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.2 A 10 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC2688 isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0V VCE(sat) Collector-Emitter Saturation Voltage IC= 50mA; IB= 5mA VBE(sat) Base-Emitter Saturation Voltage IC= 1A; IB= 0.1A ICBO Collecto...