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2SC2688 - NPN Transistor

Key Features

  • High Electrostatic-Discharge-Resistance. (E-B reverse bias, C= 2 300 p F) ESDR : TYP. 1 000 V.
  • Low Cre.
  • High fT Cre;:;;;: 3.0 pF (Ves= 30 V) fT ;ii;; 50 MHz (Vce = 30 V, Ie = -10 mA) ~ e_~;+-+--+-; N c:i L. . l-+. . ,j,-ł--1+1 00 rti.

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Other Datasheets by NEC (now Renesas Electronics)

Part Number Description
2SC2690 NPN Silicon Transistor
2SC2690A NPN Silicon Transistor
2SC2000 NPN SILICON TRANSISTOR
2SC2001 NPN SILICON TRANSISTOR
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NEC NPN SILICON TRANSISTOR 2SC2688 DESCR IPTION The 2SC2688 is designed for use in Color TV chroma output circuits. PACKAGE DIMENSIONS in miłlimeters (inches) FEATURES • High Electrostatic-Discharge-Resistance. (E-B reverse bias, C= 2 300 p F) ESDR : TYP. 1 000 V • Low Cre• High fT Cre;:;;;: 3.0 pF (Ves= 30 V) fT ;ii;; 50 MHz (Vce = 30 V, Ie = -10 mA) ~ e_~;....+-+--+-; N c:i L..l-+..,j,....-ł--1+1 00 rti ABSOLUTE MAXIMUM RATINGS Maximum Temperatures Storage Temperature . . . . . . . . . . . . . -55 to +150 °C Junction Temperature . . . . . . . . . . . 150 °C Maximum Maximum Power Dissipation's Total Power Dissipation (Ta= 25 °C) . . . . . . . . 1.25 W Total Power Dissipation (Tc= 25 °C) .... . .....