2SC2740 - NPN Transistor

Inchange Semiconductor

General Description

Collector-Emitter Sustaining Voltage- :VCEO(SUS)= 400V(Min) High Speed Switching Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for high speed switching applications.

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2SC2740 npn transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	2SC2740
Manufacturer	Inchange Semiconductor
File Size	213.76 KB
Description	NPN Transistor
Datasheet	2SC2740 Datasheet

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- :VCEO(SUS)= 400V(Min) ·High Speed Switching ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 20 A IB Base Current-Continuous Pc Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 5 A 100 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC2740 isc website：www.iscsemi.