Inchange Semiconductor 2SC2751
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SC2751 |
|---|---|
| Datasheet | 2SC2751 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min)●High Current Capability
●High Power Dissipation
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for high speed, high current switching industrial applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak 30 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 7.5 A 120 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC2751 isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC2751ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) VCBO Collector-Emitter Sustaining Voltage IC= 30mA; IB=0 Collector-Emitter Sustaining Voltage IB= 1mA, Ic=0 VCE(sat) Collect...