2SC2751
2SC2751 is Silicon NPN Power Transistors manufactured by Savant.
DESCRIPTION
- With TO-3N package
- High voltage ,high speed APPLICATIONS
- For use in high voltage ,high speed and power switching applications
PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 500 400 7 15 30 7.5 120 150 -55~150 UNIT V V V A A A W
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Savant IC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain CONDITIONS IC=10A ;IB=2A; L=50µH IC=10A ;IB=2A IC=10A ;IB=2A VCB=400V; IE=0 VCE=400V; VBE(off)=-1.5V Ta=125 VEB=5V; IC=0 IC=2A ; VCE=5V IC=5A ; VCE=5V IC=10A ; VCE=5V 15 10 7 MIN 400
SYMBOL VCEO(SUS) VCEsat VBEsat ICBO ICEX IEBO h FE-1 h FE-2 h FE-3
TYP.
UNIT V
1.0 1.5 100 100 1.0 10 80
V V µA µA m A µA
Switching times ton ts tf Turn-on time Storage time Fall time IC=10A;IB1=-IB2=2A RL=15@; VCCA150V 1.0 2.5 0.7 µs µs µs h FE-1 Classifications N 15-30 R 20-40 O 30-60 Y 40-80
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Savant IC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10mm)...
