Datasheet Details
| Part number | 2SC2773 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 190.31 KB |
| Description | NPN Transistor |
| Datasheet | 2SC2773-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC2773.
| Part number | 2SC2773 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 190.31 KB |
| Description | NPN Transistor |
| Datasheet | 2SC2773-INCHANGE.pdf |
|
|
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· ·With MT-200 package ·High power dissipation ·High current capability ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation.
APPLICATIONS ·Design for audio power amplifier and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 15 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 5 A 150 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC2773 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=30mA ;
IB=0 V(BR)EBO Emitter-base breakdown voltage IE=1mA ;
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SC2773 | Silicon NPN Power Transistors | SavantIC |
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