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2SC2774 - NPN Transistor

General Description

With MT-200 package High power dissipation High current capability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Design for audio power amplifier and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETE

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isc Silicon NPN Power Transistor DESCRIPTION With MT-200 package ·High power dissipation ·High current capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Design for audio power amplifier and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 17 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 5 A 200 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC2774 · isc website：www.iscsemi.