2SC2774 Overview
Description
With MT-200 package - High power dissipation - High current capability APPLICATIONS - For audio power amplifier and general purpose applications PINNING(see Fig.2) PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (MT-200) and symbol DESCRIPTION SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 200 200 6 17 5 200 150 -55~150 UNIT V V V A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=25mA ; IB=0 IE=1mA ; IC=0 IC=5A; IB=0.5A VCB=200V; IE=0 VEB=5V; IC=0 IC=5A ; VCE=4V IE=0 ; VCB=10V;f=1MHz IC=2A ; VCE=12V 50 MIN 200 6 2SC2774 SYMBOL V(BR)CEO V(BR)EBO VCEsat ICBO IEBO hFE Cob fT TYP. MAX UNIT V V 2.0 100 100 140 300 20 V µA µA pF MHz hFE classifications O 50-100 Y 70-140 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2774 Fig.2 outline dimensions 3.
