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2SC3074 Datasheet PDF

Inchange Semiconductor 2SC3074

The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.
Part No. 2SC3074
Datasheet 2SC3074 Download
Manufacturer
Inchange Semiconductor
Description TO-252 NPN Transistor
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2SC3074 datasheet page 1 preview

DESCRIPTION

●With TO-252(DPAK) packaging
●Excellent linearity of hFE
●Low collector-to-emitter saturation voltage
●Fast switching speed
●Complementary to 2SA1244
●Minimum Lot-to-Lot variations for robust device performance and reliable operation

APPLICATIONS

●Relay drivers, high-speed inverters , converters and Other general high current switching applications

ABSOLUTE MAXIMUM RATINGS

(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A IB Base Current-Continuous Collector Power Dissipation PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 1 A 1 W 20 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website: 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVCEO Collector-Emitter Breakdown Voltage IC=10mA; IB=0 VCE(sat) Collector-Emitter Saturat...
2SC3074 page 2 preview