2SC3074 Description
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVCEO Collector-Emitter Breakdown Voltage IC=10mA; IB=0 VCE(sat) Collector-Emitter Saturation Voltage IC=3A; IB=0.15A VBE(sat) Base-Emitter Saturation Voltage IC=3A;.