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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC3074
2SC3074
High Current Switching Applications
Unit: mm
• Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) • High speed switching time: tstg = 1.0 μs (typ.) • Complementary to 2SA1244
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 60 V
Collector-emitter voltage
VCEO 50 V
Emitter-base voltage
VEBO 5 V
Collector current
IC 5 A
Base current
IB 1 A
Collector power dissipation
Ta = 25°C Tc = 25°C
PC
1.0 W
20
Junction temperature Storage temperature range
Tj 150 °C
Tstg
−55 to 150
°C
JEDEC JEITA
― ―
Note: Using continuously under heavy loads (e.g.
2SC3074 Datasheet
