2SC3071 - NPN Epitaxial Planar Silicon Transistor

Product Overview

Sanyo Semicon Device

Part number	2SC3071
Manufacturer	Sanyo Semicon Device
File Size	82.69 KB
Description	NPN Epitaxial Planar Silicon Transistor
Datasheet	2SC3071 Datasheet
Additional preview pages of the 2SC3071 datasheet.

High DC current gain (hFE=500 to 2000).
High breakdown voltage (VCEO≥100V).
Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V).
High VEBO (VEBO≥15V). Package Dimensions unit:mm 2006B [2SC3071] EIAJ : SC-51 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temper.

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Other Datasheets by Sanyo Semicon Device

Published: Mar 22, 2005 |