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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC3076
Power Amplifier Applications Power Switching Applications
2SC3076
Unit: mm
• Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • Excellent switching time: tstg = 1.0 μs (typ.) • Complementary to 2SA1241
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
2
A
Base current
IB
1
A
Collector power dissipation
Ta = 25°C Tc = 25°C
PC
1.0 W
10
Junction temperature
Tj
150
°C
JEDEC
―
Storage temperature range
Tstg
−55 to 150
°C
JEITA
―
Note: Using continuously under heavy loads (e.g.
2SC3076 Datasheet
