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C3076 - 2SC3076

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Datasheet Details

Part number C3076
Manufacturer Toshiba
File Size 163.79 KB
Description 2SC3076
Datasheet download datasheet C3076 Datasheet
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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3076 Power Amplifier Applications Power Switching Applications 2SC3076 Unit: mm • Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • Excellent switching time: tstg = 1.0 μs (typ.) • Complementary to 2SA1241 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V Collector current IC 2 A Base current IB 1 A Collector power dissipation Ta = 25°C Tc = 25°C PC 1.0 W 10 Junction temperature Tj 150 °C JEDEC ― Storage temperature range Tstg −55 to 150 °C JEITA ― Note: Using continuously under heavy loads (e.g.
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