C3072 Description
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3072 Strobe Flash Applications Medium Power Amplifier Applications 2SC3072 Unit: mm High DC current gain : hFE = 140 to 450 (VCE = 2 V, IC = 0.5 A).
C3072 is 2SC3072 manufactured by Toshiba.
| Manufacturer | Part Number | Description |
|---|---|---|
Perkin Elmer Optoelectronics |
C30724E | (C30xxx) PhotoDiode |
Perkin Elmer Optoelectronics |
C30724P | (C30xxx) PhotoDiode |
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3072 Strobe Flash Applications Medium Power Amplifier Applications 2SC3072 Unit: mm High DC current gain : hFE = 140 to 450 (VCE = 2 V, IC = 0.5 A).