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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC3072
Strobe Flash Applications Medium Power Amplifier Applications
2SC3072
Unit: mm
• High DC current gain : hFE = 140 to 450 (VCE = 2 V, IC = 0.5 A) : hFE = 70 (min) (VCE = 2 V, IC = 4 A)
• Low collector saturation voltage : VCE (sat) = 1.0 V (max) (IC = 4 A, IB = 0.1 A)
• High power dissipation : PC = 10 W (Tc = 25°C), PC = 1.0 W (Ta = 25°C)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse (Note 1)
Base current
Collector power dissipation
Ta = 25°C Tc = 25°C
Junction temperature
Storage temperature range
VCBO VCES VCEO VEBO
IC ICP IB
PC
Tj Tstg
50
V
40 V
20
8
V
5
A 8
0.5
A
1.
C3072 Datasheet
