• Part: 2SC3070
  • Description: NPN Epitaxial Planar Silicon Transistor
  • Category: Transistor
  • Manufacturer: SANYO
  • Size: 120.30 KB
Download 2SC3070 Datasheet PDF
SANYO
2SC3070
Features - High DC current gain (h FE=800 to 3200). - Large current capacity (IC=1.2A). - Low collector-to-emitter saturation voltage (VCE(sat)=0.5V max). - High VEBO (VEBO≥15V). EIAJ : SC-51 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Conditions B : Base C : Collector E : Emitter SANYO : MP Ratings 30 25 15 1.2 2 240 1 150 - 55 to +150 Unit V V V A A m A W ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol ICBO IEBO h FE1 h FE2 f T Cob VCB=20V, IE=0 VEB=10V, IC=0 VCE=5V, IC=500m A VCE=5V, IC=10m A VCE=10V, IC=50m A VCB=10V, f=1MHz 800 600 220 17 MHz p F 1500 Conditions Ratings min typ max 0.1 0.1 3200 Unit µA...