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2SC3070 - NPN Epitaxial Planar Silicon Transistor

Key Features

  • High DC current gain (hFE=800 to 3200).
  • Large current capacity (IC=1.2A).
  • Low collector-to-emitter saturation voltage (VCE(sat)=0.5V max).
  • High VEBO (VEBO≥15V). EIAJ : SC-51 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:EN923G NPN Epitaxial Planar Silicon Transistor 2SC3070 High hFE, Low-Frequency General-Purpose Amplifier Applications Applications · Low-frequency, general-purpose amplifier., various drivers, muting circuit. www.DataSheet4U.com Package Dimensions unit:mm 2006A [2SC3070] Features · High DC current gain (hFE=800 to 3200). · Large current capacity (IC=1.2A). · Low collector-to-emitter saturation voltage (VCE(sat)=0.5V max). · High VEBO (VEBO≥15V).