2SC3072 Overview
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3072 Strobe Flash Applications Medium Power Amplifier Applications 2SC3072 Unit: mm High DC current gain : hFE = 140 to 450 (VCE = 2 V, IC = 0.5 A).
| Part number | 2SC3072 |
|---|---|
| Datasheet | 2SC3072_ToshibaSemiconductor.pdf |
| File Size | 170.42 KB |
| Manufacturer | Toshiba |
| Description | Silicon NPN Transistor |
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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3072 Strobe Flash Applications Medium Power Amplifier Applications 2SC3072 Unit: mm High DC current gain : hFE = 140 to 450 (VCE = 2 V, IC = 0.5 A).
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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2SC3072 | Silicon NPN Transistor | Kexin |
| Part Number | Description |
|---|---|
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| 2SC3098 | Silicon NPN Epitaxial Planar Type Transistor |
| 2SC3099 | Silicon NPN Epitaxial Planar Type Transistor |
| 2SC3112 | TRANSISTOR |
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