2SC3073 - Silicon NPN Transistor

Toshiba

Key Features

. Good Linearity of hpE . Complementary to 2SA1243 QS8MAX. Unit in mm -Hi'rJI a 95 MAX. n.

2SC3073 silicon npn transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	2SC3073
Manufacturer	Toshiba
File Size	105.26 KB
Description	Silicon NPN Transistor
Datasheet	2SC3073 Datasheet

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2SC3072	Silicon NPN Transistor
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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: 2SC3073 SILICON NPN EPITAXIAL TYPE (PCT PROCESS) POWER AMPLIFIER APPLICATIONS. CAR RADIO, CAR STEREO OUTPUT STAGE AMPLIFIER APPLICATIONS. FEATURES . Good Linearity of hpE . Complementary to 2SA1243 QS8MAX. Unit in mm -Hi'rJI a 95 MAX. n MAXIMUM RATINGS (Ta=25°C) Q6±Q15 0.6 MAX. CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Ta=25°C Tc=25°C VCBO v CEO VEBO ic IB PC 30 V 30 V 5 V 3 A 0.6 A 1.0 W 10 2.3 r^ i u 2 rsl 1. BASE 2. COLLECTOR (PIN) 3. EMITTER Junction Temperature Storage Temperature Range Tj Tstg 150 -55 -150 °c EIAJ °c TOSHIBA ELECTRICAL CHARACTERISTICS (Ta=25°C) Weight : 0.