| Part Number | 2SC3072 Datasheet |
|---|---|
| Manufacturer | Toshiba |
| Overview | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3072 Strobe Flash Applications Medium Power Amplifier Applications 2SC3072 Unit: mm • High DC current gain : hFE = 140 to 450 (VCE = 2 . ads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratin. |
2SC3072 Datasheet and Specifications PDF
The 2SC3072 is a Silicon NPN Transistor.
Key Specifications
| Max Operating Temp | 150 °C |
|---|
| Part Number | 2SC3072 Datasheet |
|---|---|
| Description | Silicon NPN Transistor |
| Manufacturer | Kexin Semiconductor |
| Overview | SMD Type Silicon NPN Epitaxial 2SC3072 TO-252 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features High DC current gain. Low collector saturation voltage. +0.2 9.70 -0.2 +0.15 1.50 -0.15 6.. High DC current gain. Low collector saturation voltage. +0.2 9.70 -0.2 +0.15 1.50 -0.15 6.50 +0.2 5.30-0.2 +0.15 -0.15 High power dissipation. +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3. |