Excellent Switching Times
+0.2 9.70 -0.2
tr=1.0ìs (Max. ) tf=1.5ìs (Max. ) at IC=0.5A High colletor Breakdown Voltage: VCEO=400V
+0.1 0.80-0.1
+0.15 0.50 -0.15
0.127 max
2.3
+0.15 4.60-0.15
+0.1 0.60-0.1
+0.28 1.50 -0.1
+0.25 2.65 -0.1
+0.15 5.55 -0.15
1 Base 2 Collector 3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (Pulse) Base Current Total Power dissipation T.
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SMD Type
NPN Silicon Epitaxial Transistor 2SC3075
TO-252
+0.15 1.50 -0.15
Transistors
Unit: mm
+0.1 2.30-0.1 +0.8 0.50-0.7
+0.15 6.50-0.15 +0.2 5.30-0.2
Features
Excellent Switching Times
+0.2 9.70 -0.2
tr=1.0ìs (Max.) tf=1.5ìs (Max.) at IC=0.5A High colletor Breakdown Voltage: VCEO=400V
+0.1 0.80-0.1
+0.15 0.50 -0.15
0.127 max
2.3
+0.15 4.60-0.15
+0.1 0.60-0.1
+0.28 1.50 -0.1
+0.25 2.65 -0.1
+0.15 5.55 -0.15
1 Base 2 Collector 3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (Pulse) Base Current Total Power dissipation Ta = 25 TC = 25 Junction temperature Storage temperature Tj Tstg Symbol VCBO VCEO VEBO IC Icp IB PC Rating 500 400 7 0.8 1.5 0.