Datasheet Details
| Part number | 2SC3076 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 246.50 KB |
| Description | NPN Transistor |
| Datasheet | 2SC3076-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC3076.
| Part number | 2SC3076 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 246.50 KB |
| Description | NPN Transistor |
| Datasheet | 2SC3076-INCHANGE.pdf |
|
|
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·Collector-Emitter Saturation Voltage- : VCE(sat)= 0.5V (Max.)@ IC= 1A ·Complementary to 2SA1241 ·100% tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier application ·Power switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 2 A IB Base Current PC Collector Power Dissipation Ta=25℃ PC Collector Power Dissipation TC=25℃ TJ Junction Temperature 1 A 1.0 W 10 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC3076 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 1A;
IB= 50mA VBE(sat) Base-Emitter Saturation Voltage IC= 1A;
IB= 50mA V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SC3076 | Silicon NPN Transistor | Toshiba Semiconductor |
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2SC3076 | Silicon NPN Transistor | Kexin |
| Part Number | Description |
|---|---|
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| 2SC3074 | TO-252 NPN Transistor |
| 2SC3012 | NPN Transistor |
| 2SC3025 | NPN Transistor |
| 2SC3026 | NPN Transistor |
| 2SC3032 | NPN Transistor |
| 2SC3038 | NPN Transistor |
| 2SC3039 | NPN Transistor |
| 2SC3040 | NPN Transistor |
| 2SC3041 | NPN Transistor |